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Bi2S3 (Bismuth Sulfide)
Bi2S3 is a semiconductor. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Bi2S3 belongs to the group-15 post-transition metal trichalcogenides.
Bi2S3 crystal properties
Crystal size | ~10 mm |
Electrical properties | Semiconductor |
Crystal structure | Orthorhombic |
Unit cell parameters | a = 0.4025, b = 1.117 nm, c = 1.135 nm, α = β = γ = 90° |
Type | Synthetic |
Purity | >99.995% |
Characterized by | XRD, Raman, EDX, Hall measurement |
More information? | Please contact us by or phone |
The single crystal Bi2S3 is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Stoichiometric analysis
Raman: 785nm Raman system
Raman, XRD and EDX on Bi2S3:
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XRD of a single crystal Bi2S3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
EDX of a single crystal Bi2S3.
Raman of a single crystal Bi2S3. Measurement with a 785nm Raman at room temperature.
