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UPD超快光电探测器(Ultrafast_Photodetectors)
品牌:ALPHLAS UPD
产品简介: ALPHLAS UPD系列自由空间入射超快光电探测器系列适合用于从直流到25GHz的空间光波形的测量。可提供检测短为15ps上升时间的光脉冲信号,覆盖从170至2600nm的光谱范围。 所有探测器都由紧凑坚实的过氧极化铝外壳封装,供电方式可以采用电池或外接电源。 是可提供从170到1100 nm扩展到紫外光谱范围高速硅探测器商业产品。 另一种类型*的紫外线敏感的InGaAs 探测器,可用于检测从350到1700纳米范围内的激光脉冲,因此具有宽的光谱范围和高的响应速度。完美的阻抗匹配和*的微波技术,确保测量的脉冲波形的保真度。用户可以自由使用50Ω的匹配电阻,进行高响应速度的检测。或为获得大的信号响应曲线,加入高阻抗负载。保证了UPD产品为不同的应用提供大的灵活性。 结合BBA系列宽带高增益放大器,高速光探测器对于取代昂贵和繁琐的雪崩光电二极管是一个*的选择。UPD的系列高速光电探测器是激光和光子学研究的*的工具。
产品细节图片:
特点:
l 超高速运行
l 上升时间:15 ps - 500ps
l 带宽:高达25 GHz
l 光谱范围:170 - 2600纳米
l 紧凑封装
l 电池或外部电源
l 自由空间光入射或FC/PC型
l 接头或光纤尾纤
应用:
l 脉冲形式测量
l 脉冲宽度测量
l 精确的同步
l 模式变化监控
l 外差测量
UPD系列:
Photodetector Model | Rise Time(ps) | Band-width(GHz) | Spectral Range(nm) | Quantum Efficiency@ Peak | SensitiveArea (Dia. μm/mm2) | Noise Equiv. Power (W/√Hz) | DarkCurrent (nA) | Material | Optical Input / Window Type 1) | RF Output Connec-tor | |
UPD-15-IR2-FC | < 15 | > 25 | 800 - 1700 | 75% | Fiber, 9 μm | 1.0 × 10-15 | 0.1 | InGaAs | Fiber w. FC/APC 5) | SMA | |
UPD-30-VSG-P | < 30 | > 10 | 320 - 900 | 40% | 200x200/0.04 | 3.0 × 10-15 | 0.1 | GaAs | Polished, glass | SMA | |
UPD-35-IR2-P | < 35 | > 10 | 800 - 1700 | 80% | 55/0.0024 | 1.0 × 10-15 | 0.3 | InGaAs | Polished, glass | SMA | |
UPD-35-IR2-D | < 35 | > 10 | 800 - 1700 | 80% | 55/0.0024 | 1.0 × 10-15 | 0.3 | InGaAs | Diffuse, quartz | SMA | |
UPD-35-IR2-FR | < 35 | > 10 | 800 - 1700 | 80% | 55/0.0024 | 1.0 × 10-15 | 0.3 | InGaAs | FC/PC receptacle5) | SMA | |
UPD-35-IR2-FC | < 35 | > 10 | 800 - 1700 | 80% | Fiber, 9 μm | 1.0 × 10-15 | 0.3 | InGaAs | Fiber w. FC/APC 5) | SMA | |
UPD-35-UVIR-P | < 35 | > 10 | 350 - 1700 | 80% | 55/0.0024 | 1.0 × 10-15 | 0.3 | InGaAs4) | Polished, MgF2 | SMA | |
UPD-35-UVIR-D | < 35 | > 10 | 350 - 1700 | 80% | 55/0.0024 | 1.0 × 10-15 | 0.3 | InGaAs4) | Diffuse, quartz | SMA | |
UPD-40-VSI-P | < 40 | > 8.5 | 500 - 1690 | 40% | 200x200/0.04 | 3.0 × 10-10 | 5000 | InGaAs | Polished, glass | SMA | |
UPD-40-IR2-P | < 40 | > 8.5 | 800 - 1700 | 80% | 60/0.0028 | 1.1 × 10-15 | 0.5 | InGaAs | Polished, glass | SMA | |
UPD-40-IR2-D | < 40 | > 8.5 | 800 - 1700 | 80% | 60/0.0028 | 1.1 × 10-15 | 0.5 | InGaAs | Diffuse, quartz | SMA | |
UPD-40-IR2-FR | < 40 | > 8.5 | 800 - 1700 | 80% | 60/0.0028 | 1.1 × 10-15 | 0.5 | InGaAs | FC/PC receptacle5) | SMA | |
UPD-40-IR2-FC | < 40 | > 8.5 | 800 - 1700 | 80% | Fiber, 9 μm | 1.1 × 10-15 | 0.5 | InGaAs | Fiber w. FC/APC 5) | SMA | |
UPD-40-UVIR-P | < 40 | > 8.5 | 350 - 1700 | 80% | 60/0.0028 | 1.1 × 10-15 | 0.5 | InGaAs4) | Polished, MgF2 | SMA | |
UPD-40-UVIR-D | < 40 | > 8.5 | 350 - 1700 | 80% | 60/0.0028 | 1.1 × 10-15 | 0.5 | InGaAs4) | Diffuse, quartz | SMA | |
UPD-50-SP | < 50 | > 7.0 | 320 - 1100 | 45% | 100/0.0079 | 1.2 × 10-15 | 0.001 | Si | Polished, glass | SMA | |
UPD-50-SD | < 50 | > 7.0 | 320 - 1100 | 45% | 100/0.0079 | 1.2 × 10-15 | 0.001 | Si | Diffuse, quartz | SMA | |
UPD-50-UP | < 50 | > 7.0 | 170 - 1100 | 45% | 100/0.0079 | 1.2 × 10-15 | 0.001 | Si 4) | Polished, MgF2 | SMA | |
UPD-50-UD | < 50 | > 7.0 | 170 - 1100 | 45% | 100/0.0079 | 1.2 × 10-15 | 0.001 | Si 4) | Diffuse, quartz | SMA | |
UPD-70-IR2-P | < 70 | > 5.0 | 800 - 1700 | 80% | 80/0.005 | 2.0 × 10-15 | 0.8 | InGaAs | Polished, glass | SMA | |
UPD-70-IR2-D | < 70 | > 5.0 | 800 - 1700 | 80% | 80/0.005 | 2.0 × 10-15 | 0.8 | InGaAs | Diffuse, quartz | SMA | |
UPD-70-IR2-FR | < 70 | > 5.0 | 800 - 1700 | 80% | 80/0.005 | 2.0 × 10-15 | 0.8 | InGaAs | FC/PC receptacle5) | SMA | |
UPD-70-IR2-FC | < 70 | > 5.0 | 800 - 1700 | 80% | Fiber, 9 μm | 2.0 × 10-15 | 0.8 | InGaAs | Fiber w. FC/APC 5) | SMA | |
UPD-70-UVIR-P | < 70 | > 5.0 | 350 - 1700 | 80% | 80/0.005 | 2.0 × 10-15 | 0.8 | InGaAs4) | Polished, MgF2 | SMA | |
UPD-70-UVIR-D | < 70 | > 5.0 | 350 - 1700 | 80% | 80/0.005 | 2.0 × 10-15 | 0.8 | InGaAs4) | Diffuse, quartz | SMA | |
UPD-100-IR1-P | < 100 | > 3.0 | 400 - 2000 | 80% | 80/0.005 | 3.0 × 10-13 | 700 | Ge | Polished, glass | SMA | |
UPD-200-SP | < 175 | > 2.0 | 320 - 1100 | 85% | 400/0.126 | 1.5 × 10-15 | 0.001 | Si | Polished, glass | BNC | |
UPD-200-SD | < 175 | > 2.0 | 320 - 1100 | 85% | 400/0.126 | 1.5 × 10-15 | 0.001 | Si | Diffuse, quartz | BNC | |
UPD-200-UP | < 175 | > 2.0 | 170 - 1100 | 85% | 400/0.126 | 1.5 × 10-15 | 0.001 | Si 4) | Polished, MgF2 | BNC | |
UPD-200-UD | < 175 | > 2.0 | 170 - 1100 | 85% | 400/0.126 | 1.5 × 10-15 | 0.001 | Si 4) | Diffuse, quartz | BNC | |
UPD-300-SP | < 300 | > 1.0 | 320 - 1100 | 90% | 600/0.283 | 3.0 × 10-15 | 0.01 | Si | Polished, glass | BNC | |
UPD-300-SD | < 300 | > 1.0 | 320 - 1100 | 90% | 600/0.283 | 3.0 × 10-15 | 0.01 | Si | Diffuse, quartz | BNC | |
UPD-300-UP | < 300 | > 1.0 | 170 - 1100 | 90% | 600/0.283 | 3.0 × 10-15 | 0.01 | Si 4) | Polished, MgF2 | BNC | |
UPD-300-UD | < 300 | > 1.0 | 170 - 1100 | 90% | 600/0.283 | 3.0 × 10-15 | 0.01 | Si 4) | Diffuse, quartz | BNC | |
UPD-500-SP | < 500 | > 0.6 | 320 - 1100 | 90% | 800/0.5 | 3.5 × 10-15 | 0.01 | Si | Polished, glass | BNC | |
UPD-500-SD | < 500 | > 0.6 | 320 - 1100 | 90% | 800/0.5 | 3.5 × 10-15 | 0.01 | Si | Diffuse, quartz | BNC | |
UPD-500-UP | < 500 | > 0.6 | 170 - 1100 | 90% | 800/0.5 | 3.5 × 10-15 | 0.01 | Si 4) | Polished, MgF2 | BNC | |
UPD-500-UD | < 500 | > 0.6 | 170 - 1100 | 90% | 800/0.5 | 3.5 × 10-15 | 0.01 | Si 4) | Diffuse, quartz | BNC | |
UPD-3N-IR2-P | < 1506) | > 0.46) | 800 - 2100 | 75% | 300/0.07 | 1.5 × 10-13 | 90 | InGaAs | Polished, glass | BNC | |
UPD-5N-IR2-P | < 2006) | > 0.36) | 800 - 2600 | 70% | 300/0.07 | 7.0 × 10-13 | 2000 | InGaAs | Polished, glass | BNC | |
UPD-2M-IR2-P | < 75000 | > 0.004 | 900 - 1700 | 80% | 2000/3.14 | 4.0 × 10-14 | 5 | InGaAs | Polished, glass | BNC | |
UPD-2M-IR2-P-1TEC 3) | < 75000 | > 0.004 | 900 - 1700 | 75% | 2000/3.14 | 1.0 × 10-14 | 0.3 | InGaAs | Polished, glass | BNC |
MSM超快光电探测器UltraFast
产品简介:UltraFast系列MSM超快光电探测器,探测带宽可达35GHz,探测波长范围400~1600nm。经过优化设计,探测器脉冲拖尾降至低,并可无震荡脉冲响应工作。所采用的MSM结构(金属-半导体-金属)具有电容低、串联阻抗低和感应面积大等内在优点,这些优点使得探测器具有优良的性能。特殊的结构和掺杂,提高了探测器的响应度,降低了电噪声。MSM探测器是测定高速光源和光波系统的时频特性的理想选择。
两种型号:
UltraFast-20 (Bandwidth DC – 20 GHz)
UltraFast-35 (Bandwidth DC – 35 GHz)
技术参数:
| UltraFast-20-xx | UltraFast-35-xx |
探测器类型 | MSM (Metal – Semiconductor – Metal) | |
感应材料 | InGaAs | |
带宽 (-3 dB) | DC – 20 GHz | DC – 35 GHz |
上升时间 (10% - 90%) | < 12 ps | < 11 ps |
脉宽 (FWHM) | < 20 ps | < 18 ps |
波长范围 | <400 nm – 1.6 μm | |
响应度* | 0.24 A/W @ 810 nm | 0.12 A/W @ 810 nm |
偏置电压 | 2 V – 9 V | |
偏置输入接口 | SMC male | |
标准射频信号输出口 | K-Type female |
* 跟耦合结构有关,响应度值可能会降低。
上海尖丰光电技术有限公司
AOE TECH CO.,LTD
地址:上海市闵行区元江路3599号328室
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