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其他厂商性质
天津市所在地
型号 | 盒(根) | 产品描述 |
SSS-SEIH | 10 | Silicon cantilever for non-contact/tapping -mode,special type A, with SUPERSHARPSILICON tip |
20 | ||
50 | ||
SSS-SEIHR | 10 | Silicon cantilever for non-contact/tapping -mode,special type A, with SUPERSHARPSILICON tip detector side : Al-coating |
20 | ||
50 | ||
qp-CONT | 10 | 生物探针,悬臂梁: 共振频率11kHz 力常数 0.01 N/m; 应用范围:生物探针、液体探针;优势:力常数和共振频率波动范围小,特别适用于的定量纳米力学研究和生物测试 |
20 | ||
50 | ||
qp-SCONT | 10 | 生物探针,悬臂梁: 共振频率11kHz 力常数 0.01 N/m; 应用范围:生物探针、液体探针;优势:力常数和共振频率波动范围小,特别适用于的定量纳米力学研究和生物测试 |
20 | ||
50 | ||
PtSi-CONT | 10 | 导电探针,镀层: 铂硅; 比常规导电探针更耐磨,电学信号更长久,重复性好、分辨率高。应用范围:导电探针 |
20 | ||
50 | ||
ATEC-CONT | 10 | 接触模式硅探针 |
20 | ||
50 | ||
ATEC-CONTPt | 10 | 接触模式硅探针,镀层:Pt/Ir |
20 | ||
50 | ||
ATEC-CONTAu | 10 | 接触模式探针,臂梁及针尖镀层:镀金 |
ppp-CONT | 10 | 接触模式探针, |
20 | ||
50 | ||
PPP-CONT-W | 380 | |
PPP-CONTR | 10 | 接触模式探针,镀层:Al |
20 | ||
50 | ||
PPP-CONTR-W | 380 | |
PPP-XYCONTR | 10 | 接触模式探针,镀层:Al ,XY-auto aligment |
20 | ||
50 | ||
PPP-CONTPt | 10 | Silicon cantilever for contact mode, detector side :Pt/Ir-coating ,tip side : Pt/Ir-coating |
20 | ||
50 | ||
PPP-CONTPt-W | 380 | |
PPP-CONTAu | 10 | Silicon cantilever for contact mode, detector and tip side : Au-coating |
PPP-CONTAuD | 10 | Silicon cantilever for contact mode, detector side : Au-coating |
DT-CONTR | 10 | 金刚石探针,接触模式,镀层:Al |
20 | ||
50 | ||
CDT-CONTR | 10 | 导电金刚石探针,接触模式,镀层:Al |
20 | ||
50 | ||
PPP-ZEILR | 10 | silicon cantilever for contact mode, special type, detector side :Al-coating |
20 | ||
50 | ||
PPP-ZEILR-W | 380 | |
PPP-RT-CONTR | 10 | silicon cantilever for contact mode, tip rotated by 180°,detector side :Al-coating |
20 | ||
50 | ||
PL2-CONT | 10 | Silicon-SPM-Probe with plateau tip, silicon cantilever for contact mode, |
PL2-CONTR | 10 | Silicon-SPM-Probe with plateau tip, silicon cantilever for contact mode, detector side: Al-coating |
TL-CONT | 10 | Tipless silicon cantilever based on POINTPROBE technology |
20 | ||
50 | ||
PPP-CONTSC | 10 | silicon cantilever for contact mode, short cantilever |
20 | ||
50 | ||
PPP-CONTSCR | 10 | silicon cantilever for contact mode, short cantilever, detector side :Al-coating |
20 | ||
50 | ||
PPP-CONTSCR-W | 380 | |
PPP-CONTSCPt | 10 | silicon cantilever for contact mode, short cantilever, detector side :Pt/Ir-coating |
20 | ||
50 | ||
PPP-CONTSCAu | 10 | silicon cantilever for contact mode, short cantilever, detector and tip side :Au-coating |
PPP-CONTSCAuD | 10 | silicon cantilever for contact mode, short cantilever, detector side :Au-coating |
PtSi-FM | 10 | 导电探针,镀层: 铂硅; 比常规导电探针更耐磨,电学信号更长久,重复性好、分辨率高。应用范围:导电探针 |
20 | ||
50 | ||
ATEC-FM | 10 | 软轻敲探针,镀层: 无; 针尖可视的探针,可应用到对于那些针尖需要被精确定位或必须针尖可见的应用(例如,用于纳米操作)来说,ATEC是必然的。由于其超小的半锥角,ATEC系列产品在陡峭的小尺寸图案样品测量中表现出很好的性能. Silicon cantilever for force modulation mode, |
20 | ||
50 | ||
ATEC-EFM | 10 | Silicon cantilever for force modulation mode, detector and tip side:Pt/Ir-coating |
20 | ||
50 | ||
ATEC-FMAu | 10 | Silicon cantilever for force modulation mode, detector and tip side:Au-coating |
PPP-LFMR | 10 | Silicon cantilever for lateral/friction force microscopy,detector side: Al-coating |
20 | ||
50 | ||
PPP-LFMR-W | 380 | |
PPP-FM | 10 | Silicon cantilever for force modulation mode, |
20 | ||
50 | ||
PPP-FM-W | 380 | |
PPP-FMR | 10 | Silicon cantilever for force modulation mode, detector side:Al-coating |
20 | ||
50 | ||
PPP-FMR-W | 380 | |
PPP-FMAu | 10 | Silicon cantilever for force modulation mode, detector and tip side: Au-coating |
PPP-FMAuD | 10 | Silicon cantilever for force modulation mode, detector side: Au-coating |
PPP-QFMR | 10 | Silicon cantilever for force modulation mode, High quality factor for UHV applications, detector side: Al-coating |
PPP-RT-FMR | 10 | Silicon cantilever for force modulation mode, Tip rotated by 180°,detector side: Al-coating |
20 | ||
50 | ||
PL2-FM | 10 | Silicon-SPM-Probe with plateau tip, Silicon cantilever for force modulation mode, |
PL2-FMR | 10 | Silicon-SPM-Probe with plateau tip, Silicon cantilever for force modulation mode, detector side:Al-coating |
TL-FM | 10 | Tipless silicon cantilever based on POINTPROBE technology |
20 | ||
50 | ||
SSS-FM | 10 | Silicon cantilever for force modulation mode, With SUPERSHARPSILICON tip |
20 | ||
50 | ||
SSS-FMR | 10 | Silicon cantilever for force modulation mode, With SUPERSHARPSILICON tip, detector side:Al-coating |
20 | ||
50 | ||
DT-FMR | 10 | 金刚石探针,Silicon cantilever for force modulation mode, 镀层:Al |
20 | ||
50 | ||
CDT-FMR | 10 | 导电金刚石探针,Silicon cantilever for force modulation mode, 镀层:Al |
20 | ||
50 | ||
PPP-EFM | 10 | Silicon cantilever for electrostatic force Microscopy, detector side:Pt/Ir-coating , tip side: Pt/Ir-coating |
20 | ||
50 | ||
PPP-EFM-W | 370 | |
PPP-MFMR | 10 | Silicon cantilever for Magnetic force Microscopy, detector side:Al-coating , tip side: hard magnetic coating |
20 | ||
50 | ||
PPP-MFMR-W | 370 | |
PPP-LM-MFMR | 10 | Silicon cantilever for Magnetic force Microscopy, Low Moment ,detector side:Al-coating , tip side: hard magnetic coating |
20 | ||
50 | ||
PPP-LC-MFMR | 10 | Silicon cantilever for Magnetic force Microscopy, Low Coercivity ,detector side:Al-coating , tip side: hard magnetic coating |
20 | ||
50 | ||
PPP-QLC-MFMR | 10 | Silicon cantilever for Magnetic force Microscopy, Low Coercivity ,high quality factor for UHV applications,detector side:Al-coating , tip side: hard magnetic coating |
SSS-MFMR | 10 | Silicon cantilever for high resolution Magnetic force Microscopy, detector side:Al-coating , tip side: hard magnetic coating |
20 | ||
50 | ||
SSS-QMFMR | 10 | Silicon cantilever for Magnetic force Microscopy, ,high quality factor for UHV applications,detector side:Al-coating , tip side: hard magnetic coating |
2D200 | 1 | CALIBRATION STANDARD for x-y calibration of the scanning mechanism,lattice of inverted pyramids,200nm pitch |
2D300 | 1 | CALIBRATION STANDARD for x-y calibration of the scanning mechanism,lattice of inverted pyramids,300nm pitch |
H8 | 1 | HEIGHT STANDARD for very precise z-calibration,nominal step height: 8nm |
FLAT | 1 | FLATNESS STANDARD for analysis and correction of the scanner bow,smooth plane with a maximum peak to valley distance of 10nm on a 100x100u㎡ area |