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其他厂商性质
深圳市所在地
1、QM-5,四象限,制冷模块,光敏面4×(0.2×0.2)
Specification (Ta = 20°C) | |
Parameter | Typical value |
Optical characteristics | |
Cut-on wavelength λcut-on (10%), µm | 3.5±0.5 |
Peak wavelength λpeak, µm | 4.5±0.5 |
Optimum wavelength λopt, µm | 5 |
Cut-off wavelength λcut-off (10%), µm | 6.0±0.5 |
Detectivity D*(λpeak), cm·Hz1/2/W | ≥7.0×109 |
Detectivity D*(λopt), cm·Hz1/2/W | ≥6.8×109 |
Output noise density vn(100 kHz), nV/Hz1/2 | ≤500 |
Electrical parameters | |
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W | ≥1.7×105 |
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W | ≥1.6×105 |
Low cut-off frequency flo, Hz | DC |
High cut-off frequency fhi, Hz | ≥1M |
Output impedance Rout, Ω | 50 |
Output voltage swing Vout (RL = 1 MΩ*)), V | 0 – 4 |
Output voltage offset Voff, mV | max ±20 |
Power supply voltage Vsup, VDC | 7.5 |
Power consumption, W | max 6 |
Other information | |
Active elements material | epitaxial HgCdTe heterostructure |
Active areas A, mm×mm | 4×(0.2×0.2) |
Distance between active elements, mm | 0.02 |
Window | pSiAR |
Acceptance angle Φ | ~70° |
Ambient operating temperature Ta, °C | 10 to 30 |
Signal output sockets | 4×MCX |
Power supply socket | DC 2.1/5.5 |
Mounting hole | M4 |
Fan | yes |
2、QM-10.6,四象限,非制冷模块,光敏面4×(1×1)
Specification (Ta = 20°C) | |
Parameter | Typical value |
Optical characteristics | |
Cut-on wavelength λcut-on (10%), µm | 3.0±1.0 |
Peak wavelength λpeak, µm | 8.0±2.0 |
Optimum wavelength λopt, µm | 10.6 |
Cut-off wavelength λcut-off (10%), µm | 12.0±1.0 |
Detectivity D*(λpeak), cm·Hz1/2/W | ≥1.0×107 |
Detectivity D*(λopt), cm·Hz1/2/W | ≥4.5×106 |
Output noise density vn(100 kHz) µV/Hz1/2 | ≤4.5 |
Electrical parameters | |
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W | ≥2.2×102 |
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W | ≥1.1×102 |
Low cut-off frequency flo, Hz | DC |
High cut-off frequency fhi, Hz | ≥1M |
Output impedance Rout, Ω | 50 |
Output voltage swing Vout(RL = 1 MΩ*)), V | 0 – 4 |
Output voltage offset Voff, mV | max ±20 |
Power supply voltage Vsup, VDC | 7.5 |
Power consumption, W | max 6 |
Other information | |
Active elements material | epitaxial HgCdTe heterostructure |
Active areas A, mm×mm | 4×(1×1) |
Distance between active elements, mm | 0.15±0.1 |
Window | none |
Acceptance angle Φ | ~70° |
Ambient operating temperature Ta, °C | 10 to 30 |
Signal output sockets | 4×MCX |
Power supply socket | DC 2.1/5.5 |
Mounting hole | M4 |
Fan | yes |
1、4EM-5,1×4线阵,制冷模块,光敏面4×(0.2×0.2)
Specification (Ta = 20°C) | |
Parameter | Typical value |
Optical characteristics | |
Cut-on wavelength λcut-on (10%), µm | 3.5±0.5 |
Peak wavelength λpeak, µm | 4.5±0.5 |
Optimum wavelength λopt, µm | 5 |
Cut-off wavelength λcut-off (10%), µm | 6.0±0.5 |
Detectivity D*(λpeak), cm·Hz1/2/W | ≥7.0×109 |
Detectivity D*(λopt), cm·Hz1/2/W | ≥6.8×109 |
Output noise density vn(100 kHz), nV/Hz1/2 | ≤500 |
Electrical parameters | |
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W | ≥1.7×105 |
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W | ≥1.6×105 |
Low cut-off frequency flo, Hz | DC |
High cut-off frequency fhi, Hz | ≥1M |
Output impedance Rout, Ω | 50 |
Output voltage swing Vout (RL = 1 MΩ*)), V | 0 – 4 |
Output voltage offset Voff, mV | max ±20 |
Power supply voltage Vsup, VDC | 7.5 |
Power consumption, W | max 6 |
Other information | |
Active elements material | epitaxial HgCdTe heterostructure |
Active areas A, mm×mm | 4×(0.2×0.2) |
Distance between active elements, mm | 0.05 |
Window | pSiAR |
Acceptance angle Φ | ~70° |
Ambient operating temperature Ta, °C | 10 to 30 |
Signal output sockets | 4×MCX |
Power supply socket | DC 2.1/5.5 |
Mounting hole | M4 |
Fan | yes |
2、4EM-5,1×32线阵,制冷模块,光敏面4×(0.2×0.2)
Specification (Ta = 20°C, Vb = 0 mV) | Detection module type | |
Parameter | ||
32EM-5-01 | 32EM-5-02 | |
Optical characteristics | ||
Cut-on wavelength λcut-on (10%), µm | ≤2.0 | 3.7±0.2 |
Peak wavelength λpeak, µm | 4.25±0.2 | 4.75±0.2 |
Optimal wavelength λopt, µm | 5 | 5 |
Cut-off wavelength λcut-off (10%), µm | 5.6±0.2 | 5.8±0.2 |
Detectivity D*(λpeak), cm·Hz1/2/W | ≥3.5×109 | ≥2.4×109 |
Detectivity D*(λopt), cm·Hz1/2/W | ≥2.2×109 | ≥2.2×109 |
Electrical parameters | ||
Voltage responsivity Rv(λpeak, RLoad = 1 MΩ), V/W | ≥3.5×104 | ≥5.0×104 |
Voltage responsivity Rv(λopt, RLoad = 1 MΩ), V/W | ≥2.2×104 | ≥4.6×104 |
Low cut-off frequency flo, Hz | DC | DC |
High cut-off frequency fhi, kHz | ≥400 | ≥650 |
Output impedance Rout, Ω | 50 | 50 |
Output voltage swing Vout (RLoad = 1 MΩ), V | -1 (negative output) | -1 (negative output) |
Output voltage offset Voff, mVDC | max -200 | max -200 |
Power supply voltage Vsup, VDC | 5 | 5 |
Other information | ||
Active elements material | epitaxial HgCdTe heterostructure | |
Number of elements | 1×32 linear array | |
Active area of single element A, mm×mm | 0.125×1 | 0.1×0.1 |
Distance between active elements, µm | 25 | 50 |
Window | pAl2O3AR | |
Acceptance angle Φ | ~70° | |
Ambient operating temperature Ta, °C | 10 to 30 |