Capable of high-speed, high-precision flip chip bonding by adopting probe camera 

technology and linear motor

High precision control of both bond head force and Z position

Shinkawa’s NRS technology reduced vibration that obstructs fine pitch bonding

Automatic product-type changeover function with capability to bond up to 4 different product-type 

chips enables handling of 2.5D and 3D stack packaging

Capable of handling each plunge-up method and thin die pickup

Capable of handling 12-inch chip wafer and base wafer

Molten solder detection function and high-precision Z control reduce damage on devices 

(under low force mode)

Process monitoring and management function securing stable quality and process portability

Model

LFB-2301

Bonding Method

Pulse heat thermocompression

Bonding Accuracy

±2μm (3σ) by Shinkawa’s standard condition

Bonding Force

1 - 300N

※Capable of selecting bond force control method at bonding process

However, it is not capable of switching over between low force control and high force control in the identical bond profile

･Low force Control mode：1 - 50N in 0.1N increments

･High force Control mode：10 - 300N in 1N increments

Bonding Tool Setting Temperature

RT - 400℃ (in 1℃ increments　pulse heat）

Bonding Stage Setting Temperature

RT - 150℃ (in 1℃ increments　pulse heat）

Chip Size

□2 - 20mm　t＝0.05-0.7mm

Chip Wafer Size

φ200mm, φ300mm

Base Wafer Size

φ200mm, φ300mm

Communication Interface　SECS Ⅰ/ SECS Ⅱ, HSMS, GEM

Power Consumption：5.0kW Maximum

CDA：570kPa (5.7kgf/cm２) 250L/min　Connection：φ10　Tube　1spot

Physical Dimensions and Mass

Approx. 3,292W×1,521D×1,701H mm　Approx 3,000kg

(excludes monitor display, signal tower and load port)