引入极快光电二极管的UPD系列

      UPD的系列极快光电探测器是适合于从直流到25 GHz的光波形的测量。各种型号均上升时间短15 ps和覆盖的光谱范围从170到2600纳米。

      所有光电二极管被封闭在紧凑和固体铝外壳和可以与电池或外部电源被偏置。

      硅型光电检测器的紫外扩展版本是覆盖光谱范围从170到1100纳米的商业产品。

      的UV敏感的InGaAs光电检测另一种类型的可用于在范围检测激光脉冲从350至1700纳米，因此具有市售的极宽的光谱范围和高速度。

      的阻抗匹配和地区的微波技术保证没有任何振铃或文物脉冲形式测量。顾客可以自由地使用50Ω端接电阻为高速度操作，或用于获得大的信号的高阻抗负载。这极大保证了不同的应用的灵活性。

     在我们的组合  的BBA系列宽带高增益放大器，高速光电检测器是有利的替代昂贵和麻烦的雪崩光电二极管。

该UPD系列高速光电探测器是激光和光子学研究的工具。

的光电二极管的特征

高速运行

上升时间：从15 ps的开始

带宽：高达25 GHz的

光谱范围：170 - 2600纳米（紫外到红外）

紧凑的设计

电池或外部电源

模型自由空间光束，
或FC / PC插座
或尾纤与SM光纤

的光电二极管的应用

脉冲形态测量

脉冲宽度测量

精确同步

模式跳动监控

外差测量

新光电型号：更快的上升时间和更宽的波长范围

UPD-15-IR2-FC：极快的InGaAs PIN探测器，上升时间<15 ps的，带宽> 25 GHz的频谱范围800 - 1700纳米，与FC / APC连接器光纤耦合输入

UPD-35-IR2-P，UPD-35-IR2-D：极快的InGaAs PIN光电探测器，上升时间<35 ps的，带宽> 10 GHz的频谱范围800 - 1700纳米，抛光或弥漫性窗口

UPD-35-UVIR-P，UPD-35-UVIR-D：极快的InGaAs PIN光电探测器，上升时间<35 ps的，带宽> 10 GHz时，光谱范围350 - 1700纳米，抛光或弥漫性窗口

UPD-50-SP，UPD-50-SD，UPD-50-UD，UPD-50-UP：极快硅PIN光电探测器，上升时间50 ps的，下降时间50 ps的，带宽> 7 GHz的
频谱范围170 - 1100纳米或320 - 1100纳米，抛光或弥漫性窗口

UPD-100-IR1-P：极快光电探测器戈，上升时间<100 ps的，脉冲宽度（FWHM）300 PS，光谱范围400 - 2000纳米

UPD-3N-IR2-P：快速砷化铟镓光电探测器，红外扩展范围可达2.1＆微M，上升时间150 ps的

UPD-5N-IR2-P：快速砷化铟镓光电探测器，红外扩展范围可达2.6＆微M，上升时间为200 ps

Introducing the UPD Series of Ultrafast Photodiodes

      The UPD series of ultrafast photodetectors are best suited for measurement of optical waveforms from DC to 25 GHz. Various models feature rise times as short as 15 ps ａnd cover the spectral range from 170 to 2600 nm.

      All photodiodes are enclosed in compact and solid aluminum housings and can be biased with a battery or an external power supply.

      The UV-extended versions of the silicon type photodetectors are the only commercial products that cover the spectral range from 170 to 1100 nm.

      Another type of unique UV-sensitive InGaAs photodetectors can be used for detecting laser pulses in the range from 350 to 1700 nm, thus having the widest spectral range and the highest speed commercially available.

      Perfect impedance matching and state-of-the-art microwave technology assure pulse form measurements without any ringing or artefacts. The customer is free to use a 50 Ω terminating resistor for highest speed operation, or a high impedance load for obtaining large signals. This guarantees maximum flexibility for diverse applications.

     In combination with our BBA series of widebａnd high-gain amplifiers, the high-speed photodetectors are an advantageous alternative to the expensive and cumbersome avalanche photodiodes.

The UPD series high-speed photodetectors are indispensable tools for laser and photonics research.

Features of the Photodiodes

Ultra High-Speed Operation

Rise Times: starting from 15 ps

Bandwidths: up to 25 GHz

Spectral Ranges: 170 - 2600 nm (UV to IR)

Compact Design

Battery or External Power Supply

Models for Free-Space Beam,
or with FC/PC Receptacle
or Pigtailed with SM Fiber

Applications of the Photodiodes

Pulse Form Measurements

Pulse Duration Measurements

Precise Synchronization

Mode Beating Monitoring

Heterodyne Measurements

New Photodetector Models Available: Faster Rise Times & Wider Wavelength Ranges

UPD-15-IR2-FC: Ultrafast InGaAs PIN photodetector, rise time < 15 ps, bandwidth > 25 GHz, spectral range 800 - 1700 nm, fiber-coupled input with FC/APC connector

UPD-35-IR2-P, UPD-35-IR2-D: Ultrafast InGaAs PIN photodetectors, rise time < 35 ps, bandwidth > 10 GHz, spectral range  800 - 1700 nm, with polished or diffuse window

UPD-35-UVIR-P, UPD-35-UVIR-D: Ultrafast InGaAs PIN photodetectors, rise time < 35 ps, bandwidth > 10 GHz, spectral range 350 - 1700 nm, with polished or diffuse window

UPD-50-SP, UPD-50-SD, UPD-50-UD, UPD-50-UP: Ultrafast Si PIN photodetector, rise time 50 ps, fall time 50 ps, bandwidth > 7 GHz,
spectral range 170 - 1100 nm or 320 - 1100 nm, with polished or diffuse window

UPD-100-IR1-P: Ultrafast Ge photodetector, rise time < 100 ps, pulsewidth (FWHM) 300 ps, spectral range 400 - 2000 nm

UPD-3N-IR2-P: Fast InGaAs photodetector, extended infrared range up to 2.1 &micro;m, rise time 150 ps

UPD-5N-IR2-P: Fast InGaAs photodetector, extended infrared range up to 2.6 &micro;m, rise time 200 ps